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       Page 1 QW-A1081 CDBFR40 REV:A 5 O C unless otherwise noted) Maximum Rating (at TA=2 n Typ Max Unit IO VR(RMS) VR VRM Average forward rectified current Reverse voltage Peak reverse voltage Symbol Mi Parameter Conditions RMS reverse voltage mA V V V 200 28 40 40 IFSM Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) A 0.6 PD Power dissipation mW 200 TSTG Tj Storage temperature Junction temperature O C O C +125 +125 -65 Symbol Min Typ Max Unit Parameter Conditions Forward voltage IF = 4 0mA IF = 1 mA VF V 1 0.38 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 Reverse current Capacitance between terminals Reverse recovery time VR = 3 0V f = 1 MHz, and 0 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 ohm IR CT Trr uA pF nS 5 5 0.2 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.040(1.00) Typ. Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 1005/SOD-323F standard package m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Polarity: Indicated by cathode band. - Mounting position: Any - Weight: 0.006 gram(approx.). Io = 2 00 mA VR = 4 0 Volts RoHS Device 1005/SOD-323F SMD Schottky Barrier Diode |